Ga2NiS4
metalGa₂NiS₄ is a ternary metal sulfide compound combining gallium, nickel, and sulfur, belonging to the family of chalcogenide semiconductors and mixed-metal sulfides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its electronic structure and light-absorption properties are being investigated as a potential absorber layer or window material in thin-film solar cells and photoelectrochemical devices. Engineers and researchers consider this compound because its multi-metal composition offers tunable bandgap properties and the potential for improved light harvesting compared to binary sulfides, though it remains largely in the experimental phase without widespread commercial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 2,924.7 | ksi | — | ||
| ↳ | 6,802.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G)2 entries | 1,777.7 | ksi | — | ||
| ↳ | 3,608.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1422 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.555 | µB | — | ||
Seebeck Coefficient(S) | 11.51 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05710 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5896 | eV/atom | — |