Ga2NiS4

Name: Ga2NiS4
Brand: MatWorld

metal

· Ga2NiS4

Ga₂NiS₄ is a ternary metal sulfide compound combining gallium, nickel, and sulfur, belonging to the family of chalcogenide semiconductors and mixed-metal sulfides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its electronic structure and light-absorption properties are being investigated as a potential absorber layer or window material in thin-film solar cells and photoelectrochemical devices. Engineers and researchers consider this compound because its multi-metal composition offers tunable bandgap properties and the potential for improved light harvesting compared to binary sulfides, though it remains largely in the experimental phase without widespread commercial adoption.

thin-film photovoltaicssemiconductor researchphotoelectrochemical cellsoptoelectronic devicesexperimental absorber layersbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	2,924.7	ksi	DFT
↳	6,802.3	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2900	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	1,777.7	ksi	DFT
↳	3,608.5	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1422	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	Measured
↳	0.000	eV	DFT · OptB88vdW
Magnetic Moment(μB)	1.555	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000719	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000803	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	11.51	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	11.07	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.05710	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5896	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2NiS4 — Properties & Data | MatWorld

Ga2NiS4

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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