Ga2NiS4
metalGa₂NiS₄ is a ternary metal sulfide compound combining gallium, nickel, and sulfur, belonging to the family of chalcogenide semiconductors and mixed-metal sulfides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its electronic structure and light-absorption properties are being investigated as a potential absorber layer or window material in thin-film solar cells and photoelectrochemical devices. Engineers and researchers consider this compound because its multi-metal composition offers tunable bandgap properties and the potential for improved light harvesting compared to binary sulfides, though it remains largely in the experimental phase without widespread commercial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G)2 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |