Ga₂N₃F is an experimental ceramic compound combining gallium nitride (GaN) chemistry with fluorine incorporation, representing research into advanced nitride-fluoride materials. While not yet established in mainstream industrial production, this material belongs to the family of wide-bandgap semiconductors and refractory ceramics being explored for next-generation high-temperature, high-power applications where conventional GaN may be limited. Engineers would consider this material primarily in research and development contexts aimed at extending semiconductor performance boundaries, particularly where fluorine doping or fluoride-based modifications might enhance thermal stability, electrical properties, or chemical resistance beyond standard gallium nitride.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,148.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.4500 | - | — | ||
Shear Modulus(G) | 2,174.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1830 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.5160 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.602 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.6783 | eV/atom | — |