Ga₂HgTe₄ is a ternary semiconductor ceramic compound combining gallium, mercury, and tellurium—a member of the II-VI semiconductor family with potential applications in infrared optics and detection systems. This material remains primarily in research and development phases, valued for its wide bandgap and optical properties that position it as a candidate for thermal imaging, infrared sensing, and potentially high-energy radiation detection where conventional semiconductors reach performance limits. Engineers consider this compound family when designing systems operating in the infrared spectrum or requiring materials with unique electronic band structures distinct from more mature commercial alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24.14 | GPa | — | ||
Shear Modulus(G) | 15.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.145 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5960 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 16.56 | - | — | ||
| ↳ | 19.22 | - | — | ||
| ↳ | 15.23 range 13.44–17.01median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04371 | C/m² | — | ||
| ↳ | 0.5739 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -109 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2285 | eV/atom | — |