Ga₂FeSe₄ is a quaternary chalcogenide compound combining gallium, iron, and selenium—a member of the semiconductor and photovoltaic materials family. This is primarily a research material rather than an established industrial product, investigated for potential applications in thin-film photovoltaics, optoelectronics, and energy conversion devices due to the favorable band-gap properties and light-absorption characteristics typical of iron chalcogenides. Engineers and researchers consider compounds in this family as alternatives to conventional silicon or CIGS-based solar cells, particularly where low-cost, earth-abundant absorber layers are desired, though commercial deployment remains limited and material stability and scalability are ongoing development challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 44.68 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 26.23 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.989 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 3.999 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07040 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4359 | eV/atom | — |