Ga₂FeS₄ is a ternary chalcogenide compound combining gallium, iron, and sulfur, belonging to the family of semiconducting metal sulfides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its layered crystal structure and direct bandgap characteristics make it a candidate for thin-film solar cells, photodetectors, and light-emitting devices. The weak interlayer bonding typical of this material class enables mechanical exfoliation into few-layer or single-layer forms, positioning it within the broader context of two-dimensional materials research for next-generation electronics and photonics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 2,826.7 | ksi | — | ||
| ↳ | 6,326.5 | ksi | — | ||
Exfoliation Energy(Eexf) | 33.88 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G)2 entries | 1,737.8 | ksi | — | ||
| ↳ | 3,990 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1374 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02050 range 0.000–0.04100median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 3.831 | µB | — | ||
Seebeck Coefficient(S) | 28.89 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1031 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5846 | eV/atom | — |