Ga2BiSe4 is a ternary chalcogenide ceramic compound belonging to the III-V semiconductor family, combining gallium, bismuth, and selenium elements. This material is primarily investigated in research contexts for optoelectronic and photonic applications, particularly where infrared transmission, nonlinear optical properties, or wide bandgap semiconducting behavior are needed. Relative to conventional III-V semiconductors like GaAs, chalcogenide compounds offer extended infrared transparency and tunable electronic properties, making them candidates for specialized sensing, imaging, and frequency conversion devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2056 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.994 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -285.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5306 | eV/atom | — |