Ga2BiS4

ceramic
· JVASP-25790· Ga2BiS4

Ga₂BiS₄ is a ternary chalcogenide ceramic compound composed of gallium, bismuth, and sulfur, belonging to the family of wide-bandgap semiconductors and photonic materials. This is primarily a research-phase material investigated for optoelectronic and photovoltaic applications, where its layered crystal structure and electronic properties show promise for infrared detection, nonlinear optical devices, and thin-film solar cells. Engineers consider this material when exploring alternatives to traditional semiconductors in specialized photonic systems where bismuth-based compounds offer advantages in radiation hardness, cost reduction, or tailored optical response compared to conventional III-V or II-VI semiconductors.

infrared detectorsphotovoltaic researchnonlinear optical devicesradiation-tolerant electronicsthin-film optoelectronicswide-bandgap semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
ksi
Poisson's Ratio(ν)
-
Shear Modulus(G)
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
lb/in³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Seebeck Coefficient(S)
µV/K
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
Ga2BiS4 — Properties & Data | MatWorld