Ga₂BiS₄ is a ternary chalcogenide ceramic compound composed of gallium, bismuth, and sulfur, belonging to the family of wide-bandgap semiconductors and photonic materials. This is primarily a research-phase material investigated for optoelectronic and photovoltaic applications, where its layered crystal structure and electronic properties show promise for infrared detection, nonlinear optical devices, and thin-film solar cells. Engineers consider this material when exploring alternatives to traditional semiconductors in specialized photonic systems where bismuth-based compounds offer advantages in radiation hardness, cost reduction, or tailored optical response compared to conventional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,913.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.2000 | - | — | ||
Shear Modulus(G) | 3,041.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1658 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.539 | eV | — | ||
Seebeck Coefficient(S) | -382.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6504 | eV/atom | — |