Ga2BiS4 — Properties & Data | MatWorld

Ga2BiS4

ceramic

· JVASP-25790· Ga2BiS4

Ga₂BiS₄ is a ternary chalcogenide ceramic compound composed of gallium, bismuth, and sulfur, belonging to the family of wide-bandgap semiconductors and photonic materials. This is primarily a research-phase material investigated for optoelectronic and photovoltaic applications, where its layered crystal structure and electronic properties show promise for infrared detection, nonlinear optical devices, and thin-film solar cells. Engineers consider this material when exploring alternatives to traditional semiconductors in specialized photonic systems where bismuth-based compounds offer advantages in radiation hardness, cost reduction, or tailored optical response compared to conventional III-V or II-VI semiconductors.

infrared detectorsphotovoltaic researchnonlinear optical devicesradiation-tolerant electronicsthin-film optoelectronicswide-bandgap semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	26.98	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2000	-	DFT · OptB88vdW
Shear Modulus(G)	20.97	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.589	kg/m³	DFT · OptB88vdW

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Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	2.539	eV	DFT · OptB88vdW
↳	3.248	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.275	-	DFT · OptB88vdW
↳	6.199	-	DFT · TBmBJ
Thermoelectric Power Factor(PF)2 entries	0.000761	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00102	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-382.8	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	356.3	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	2.600	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6504	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2BiS4

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental