Ga2 is a binary semiconductor compound in the gallium-based material family, likely referring to gallium arsenide (GaAs) or a gallium-containing phase, though the exact composition is not specified in available records. This material is widely used in optoelectronic and high-frequency electronic applications where direct bandgap properties and high electron mobility are critical advantages over silicon. Gallium-based semiconductors are foundational in photovoltaic devices, light-emitting diodes (LEDs), integrated circuits for RF/microwave systems, and space applications, where superior performance at high temperatures and frequencies justifies their cost relative to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45.13 | GPa | — | ||
Shear Modulus(G) | 15.92 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.02500 | eV/atom | — |