Ga₂WSe is a layered semiconductor compound combining gallium, tungsten, and selenium in a 2:1:1 stoichiometry. This material belongs to the family of transition metal dichalcogenides and related heterostructures, which are of significant interest in two-dimensional materials research for their direct bandgaps and strong light-matter interactions. While primarily in the research phase rather than established industrial production, Ga₂WSe and related ternary semiconductors show promise for optoelectronic and photonic applications where the tunable electronic and optical properties of layered materials can be leveraged.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00620 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6330 | eV/atom | — |