Ga₂Se₄Hg₁ is a ternary semiconductor compound combining gallium selenide with mercury, belonging to the II-VI semiconductor family. This material is primarily of research interest rather than established commercial production, investigated for potential optoelectronic and photonic applications where the mercury incorporation may modify bandgap characteristics and carrier transport properties compared to conventional gallium selenide. Engineers considering this material should treat it as an experimental compound; its practical viability depends on synthesis scalability, thermal stability, and whether its electronic properties offer advantages over more mature ternary semiconductors like CdTe or CdSe-based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.94 | GPa | — | ||
Shear Modulus(G) | 21.11 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8722 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4790 | eV/atom | — |