Ga2 Se4 Cd1
semiconductorGa2Se4Cd1 is a mixed chalcogenide semiconductor compound combining gallium selenide with cadmium, belonging to the family of II-VI and III-VI semiconductor materials. This appears to be a research or developmental compound rather than an established commercial material; compounds in this family are investigated for their photonic and optoelectronic properties, particularly for applications requiring band gap engineering or tunable optical characteristics. The incorporation of cadmium into gallium selenide structure offers potential for modified electronic properties compared to binary gallium selenide, making it of interest in materials research for photovoltaics, nonlinear optics, or radiation detection—though industrial adoption depends on synthesis scalability, environmental considerations regarding cadmium, and performance advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |