Ga₂S₄Zn₁ is a quaternary semiconductor compound combining gallium, sulfur, and zinc elements, belonging to the family of III-VI semiconductors with potential optoelectronic and photonic properties. This material is primarily of research and developmental interest rather than established in high-volume industrial production, and is being investigated for applications requiring wide bandgap semiconductors, photovoltaic devices, and solid-state optics. Engineers would consider this compound when designing next-generation light-emitting or light-absorbing devices where the specific electronic structure and lattice properties of gallium-zinc sulfides offer advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.30 | GPa | — | ||
Shear Modulus(G) | 33.28 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.901 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8000 | eV/atom | — |