Ga₂P₂ is a III-V semiconductor compound composed of gallium and phosphorus, belonging to the same family as the more common GaP material used in optoelectronics and power devices. This material is primarily of research interest for potential applications in high-frequency and high-power semiconductor devices, leveraging the wide bandgap and thermal stability characteristics typical of gallium phosphide compounds. Engineers investigating advanced semiconductor architectures may evaluate Ga₂P₂ for its potential in next-generation RF components, LEDs, or integrated photonic circuits, though commercial deployment remains limited compared to well-established III-V alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,193.7 | ksi | — | ||
Shear Modulus(G) | 7,511.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.263 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4190 | eV/atom | — |