Ga2 Ni1 S4
semiconductorGa₂Ni₁S₄ is a ternary semiconductor compound combining gallium, nickel, and sulfur elements, belonging to the family of chalcogenide semiconductors with potential for optoelectronic and photovoltaic applications. This material is primarily of research interest rather than established commercial production, with potential applications in thin-film solar cells, photodetectors, and light-emitting devices where its direct bandgap and photocatalytic properties could offer advantages over traditional silicon-based alternatives. The incorporation of nickel into gallium sulfide systems is being explored for tuning electronic properties and improving device performance in next-generation energy conversion and sensing technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |