Ga₂N₂ is a gallium nitride (GaN) semiconductor compound belonging to the III-V nitride family, known for its wide bandgap and high electron mobility. This material is central to modern power electronics and optoelectronic devices, where it enables efficient high-frequency switching, compact power conversion systems, and high-brightness light emission across UV to visible wavelengths. Engineers select GaN-based semiconductors over traditional silicon when projects demand higher thermal stability, faster switching speeds, reduced energy losses, or operation in harsh temperature environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,957 | ksi | — | ||
Shear Modulus(G) | 15,646.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.943 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5720 | eV/atom | — |