Ga₂Mo₆ is a gallium molybdenum compound semiconductor belonging to the transition metal chalcogenide family, characterized by layered crystal structures similar to dichalcogenides. This material is primarily of research interest for optoelectronic and electronic applications, where its semiconducting properties and structural characteristics make it a candidate for next-generation devices requiring tunable band gaps and two-dimensional behavior; however, it remains largely experimental with limited industrial deployment compared to established semiconductors like GaAs or MoS₂.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 230.4 | GPa | — | ||
Shear Modulus(G) | 116.2 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1380 | eV/atom | — |