Ga₂In₂Te₄ is a quaternary III-VI semiconductor compound combining gallium, indium, and tellurium elements, belonging to the family of chalcogenide semiconductors. This material is primarily of research interest for infrared optics and photonic applications, where its wide bandgap and optical transparency in the mid-to-long-wave infrared spectrum make it attractive for thermal imaging, spectroscopy, and sensing devices. While not yet a mainstream industrial material like more established semiconductors (GaAs, InP), Ga₂In₂Te₄ offers potential advantages in tunable bandgap engineering and lattice-matched heterostructures for next-generation infrared detectors and optoelectronic components.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.59 | GPa | — | ||
Shear Modulus(G) | 15.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01060 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3130 | eV/atom | — |