Ga₂Fe₁S₄ is a ternary semiconductor compound combining gallium, iron, and sulfur elements, belonging to the family of chalcogenide semiconductors. This material is primarily investigated in research contexts for photovoltaic and optoelectronic applications, where its semiconducting bandgap and iron-doping strategy offer potential advantages in light absorption and charge transport compared to binary gallium sulfide. While not yet established in high-volume industrial production, compounds in this material family are of interest for thin-film solar cells, photodetectors, and spintronic devices where transition-metal doping can enhance functional properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.62 | GPa | — | ||
Shear Modulus(G) | 27.51 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5860 | eV/atom | — |