Ga₂CdTe₄ is a quaternary semiconductor compound belonging to the II-VI semiconductor family, combining gallium, cadmium, and tellurium elements. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its bandgap and optical properties could enable infrared detection, solar cells, or radiation detection devices. Compared to ternary alternatives like CdTe or binary compounds, quaternary semiconductors like Ga₂CdTe₄ offer tunable electronic properties through compositional variation, making them candidates for next-generation photodetectors and high-efficiency energy conversion systems, though commercial deployment remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,328.5 | ksi | — | ||
Shear Modulus(G) | 2,588.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9695 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3560 | eV/atom | — |