Ga2 Br8 Pd1

semiconductor

· Ga2 Br8 Pd1

Ga₂Br₈Pd₁ is an experimental gallium-palladium bromide compound classified as a semiconductor, likely synthesized for research into mixed-halide perovskite or advanced optoelectronic materials. This class of gallium-based halide semiconductors is primarily investigated in academic and development settings for potential applications in photovoltaics, photodetectors, and light-emitting devices, where the palladium doping may influence bandgap, carrier mobility, or stability compared to undoped gallium halides. The material represents an early-stage research composition rather than a production engineering material, with relevance to engineers prototyping next-generation solid-state electronic or photonic devices.

experimental optoelectronic devicesperovskite-class photovoltaics (research)photodetectors (lab-scale)bandgap engineeringsemiconductor researchhalide compound development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	11.74	GPa	—
Shear Modulus(G)	6.047	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.382	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6630	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2 Br8 Pd1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control