Ga2 Bi2 O6

semiconductor

· Ga2 Bi2 O6

Ga₂Bi₂O₆ is an oxide semiconductor compound combining gallium and bismuth in a mixed-valence structure, belonging to the family of complex metal oxides under active research for next-generation optoelectronic and photocatalytic applications. This material is primarily investigated in laboratory and early-stage development contexts rather than established high-volume production, with potential applications in solar energy conversion, photocatalysis, and visible-light-responsive devices where its narrow bandgap and electronic structure offer advantages over conventional oxide semiconductors.

photocatalytic water splittingvisible-light photocatalysissolar energy conversionoptoelectronic devicesenvironmental remediationresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.181	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.665	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2 Bi2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control