Ga2 Bi1 As1

semiconductor

· Ga2 Bi1 As1

Ga₂BiAs is a III-V semiconductor compound composed of gallium, bismuth, and arsenic, representing an emerging material in the III-V alloy family with potential for bandgap engineering and device applications. This composition is primarily of research interest for optoelectronic and photovoltaic devices, where bismuth incorporation into gallium arsenide can enable tunable optical and electronic properties compared to conventional GaAs. Engineers and researchers exploring this material are typically investigating next-generation solar cells, infrared detectors, and integrated photonics where unconventional bandgap alignment or strain management is required.

photovoltaic researchoptoelectronic devicesinfrared detectorsIII-V semiconductor alloysbandgap engineeringexperimental compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	6,684.6	ksi	—
Shear Modulus(G)	3,659.7	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.09600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2 Bi1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control