Ga₂As₂ is a III-V compound semiconductor material, part of the gallium arsenide family that forms the basis for high-performance optoelectronic and RF devices. This material is primarily of research and specialized manufacturing interest, used in applications requiring direct bandgap semiconductors with superior electron mobility and high-frequency performance compared to silicon. Engineers select gallium arsenide compounds for systems where efficiency, speed, and reliability under demanding conditions (high temperature, high power, radiation) outweigh the cost premium of III-V processing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,003.7 | ksi | — | ||
Shear Modulus(G) | 5,962.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5154 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3210 | eV/atom | — |