Ga₂Ag₂Te₄ is a quaternary semiconductor compound combining gallium, silver, and tellurium in a layered chalcogenide structure. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its narrow bandgap and mixed-valence character offer potential advantages over conventional binary semiconductors. The silver-tellurium bonding creates distinctive electronic properties relevant to mid-infrared detection, photovoltaics, and solid-state cooling devices, though it remains largely experimental outside specialized research contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2390 | eV/atom | — |