Ga₂Ag₂S₄ is a quaternary semiconductor compound combining gallium, silver, and sulfur elements, belonging to the family of chalcogenide semiconductors. This material is primarily of research and development interest for photovoltaic and optoelectronic applications, where its bandgap and light-absorption properties could enable thin-film solar cells, photodetectors, or other light-responsive devices. While not yet widely deployed in high-volume commercial production, materials in this chemical family are being investigated as potential alternatives to conventional semiconductors due to their tunable electronic properties and compatibility with solution-based or vapor-phase deposition methods.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,456.5 | ksi | — | ||
Shear Modulus(G) | 2,860.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9371 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5500 | eV/atom | — |