Ga₂Ag₂P₄Se₁₂ is a quaternary semiconductor compound combining gallium, silver, phosphorus, and selenium elements, representing a complex chalcogenide-phosphide system. This material is primarily of research interest for optoelectronic and photonic applications, where its bandgap and light-interaction properties offer potential advantages in infrared detection, nonlinear optical devices, and wide-spectrum photoresponse; silver-containing selenides and phosphides are investigated as alternatives to more conventional III–V semiconductors when tunable optical response or enhanced conductivity is needed for specialized sensing or conversion devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.28 | GPa | — | ||
Shear Modulus(G) | 17.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2992 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1840 | eV/atom | — |