Ga1Sb0.99As0.01

semiconductor

· Ga1Sb0.99As0.01

Ga₁Sb₀.₉₉As₀.₀₁ is a III-V semiconductor alloy—a near-gallium antimonide composition with minimal arsenic doping—engineered to tune the bandgap and lattice properties for infrared and optoelectronic applications. This material belongs to the GaSb family and is primarily of research and specialized industrial interest, used in infrared detectors, thermal imaging sensors, and heterojunction devices where precise bandgap engineering and lattice matching are critical for performance.

infrared detectorsthermal imaging sensorsoptoelectronic devicesheterojunction substratesbandgap engineeringresearch-grade semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.370	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1Sb0.99As0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control