Ga1Sb0.95As0.05

semiconductor

· Ga1Sb0.95As0.05

Ga₁Sb₀.₉₅As₀.₀₅ is a ternary III-V compound semiconductor alloy composed primarily of gallium antimonide with a small arsenic substitution, forming a direct-bandgap material in the infrared spectrum. This composition sits within the GaSb-GaAs material family and is primarily investigated for infrared optoelectronic devices and photodetectors operating in the 2–5 μm wavelength range, where the arsenic doping allows bandgap tuning compared to pure GaSb. The arsenic incorporation provides a research platform for lattice engineering and thermal management in space-qualified and military-grade thermal imaging systems, though this composition remains largely in the research and specialized production domain rather than commodity electronics.

infrared photodetectorsthermal imaging sensorsspace optoelectronicsbandgap-engineered semiconductorsIII-V heterostructuresmissile warning systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.280	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1Sb0.95As0.05

Electrical Properties

Regulatory Screening

Environmental

Export Control