Ga1Sb0.85As0.15

semiconductor

· Ga1Sb0.85As0.15

Ga₁Sb₀.₈₅As₀.₁₅ is a ternary III-V semiconductor alloy combining gallium, antimony, and arsenic. It belongs to the gallium antimonide (GaSb) family with arsenic incorporation, engineered to tune the bandgap and lattice parameters for specific optoelectronic applications. This material is primarily of research and specialized commercial interest for infrared (IR) photonics and thermoelectric devices, where the arsenic dopant modifies the bandgap relative to binary GaSb, enabling detection and emission in the mid-to-long wavelength IR range. Engineers select this alloy when lattice matching, thermal stability, or specific IR wavelength coverage is critical and when conventional GaAs or InSb alternatives do not meet performance requirements.

infrared detectors and sensorsthermal imaging systemsmid-wave infrared (MWIR) applicationsthermoelectric devicesoptoelectronic researchlattice-engineered semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1Sb0.85As0.15

Electrical Properties

Regulatory Screening

Environmental

Export Control