Ga1Sb0.35As0.65

semiconductor

· Ga1Sb0.35As0.65

Ga₁Sb₀.₃₅As₀.₆₅ is a III-V compound semiconductor alloy combining gallium, antimony, and arsenic in a tunable bandgap architecture. This material belongs to the GaSb-GaAs pseudobinary system and is primarily of research and specialized photonic interest, where precise bandgap engineering enables tailoring of optical and electrical properties for infrared and near-infrared applications. The antimony-arsenic ratio allows engineers to optimize wavelength response and carrier transport characteristics relative to binary alternatives like GaAs or GaSb alone.

infrared photodetectorsoptoelectronic devicesbandgap engineering researchhigh-speed transistorsquantum well heterostructuresmid-wave infrared sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1Sb0.35As0.65

Electrical Properties

Regulatory Screening

Environmental

Export Control