Ga1Sb0.14As0.86
semiconductor· Ga1Sb0.14As0.86
Ga₁Sb₀.₁₄As₀.₈₆ is a ternary III-V semiconductor alloy combining gallium arsenide (GaAs) with antimony (Sb) substitution, creating a direct-bandgap material tunable for specific wavelengths in the infrared spectrum. This compound is primarily used in optoelectronic devices and photodetectors where wavelength selectivity in the near-to mid-infrared range (typically 1–2 μm) is required, offering advantages over binary GaAs in extending operational wavelength windows for telecommunications and sensing applications. The material represents an intermediate composition within the GaAsSb alloy family, balancing lattice matching considerations with bandgap engineering for specialized detector and emitter designs.
infrared photodetectorstelecommunications wavelength windowsoptoelectronic sensorsnarrow-bandgap semiconductorsheterojunction devicesresearch-stage compound semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.