Ga1Sb0.01As0.99
semiconductor· Ga1Sb0.01As0.99
Ga₁Sb₀.₀₁As₀.₉₉ is a III-V direct bandgap semiconductor alloy, specifically a gallium arsenide (GaAs) compound with antimony (Sb) substitution at the anion site. This near-binary composition sits at the GaAs-rich end of the GaAs-GaSb pseudobinary system and is primarily of research and developmental interest for tuning optoelectronic properties relative to standard GaAs. The small antimony incorporation enables bandgap engineering and lattice parameter adjustment for specialized photonic and high-frequency applications where the subtle material modifications provide performance advantages over undoped GaAs or conventional heterostructures.
photonic integrated circuitsinfrared optoelectronicshigh-frequency transistorsbandgap-engineered heterostructuresresearch-stage materialscompound semiconductor development
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.