Ga₁Sb₀.₀₁As₀.₉₉ is a III-V direct bandgap semiconductor alloy, specifically a gallium arsenide (GaAs) compound with antimony (Sb) substitution at the anion site. This near-binary composition sits at the GaAs-rich end of the GaAs-GaSb pseudobinary system and is primarily of research and developmental interest for tuning optoelectronic properties relative to standard GaAs. The small antimony incorporation enables bandgap engineering and lattice parameter adjustment for specialized photonic and high-frequency applications where the subtle material modifications provide performance advantages over undoped GaAs or conventional heterostructures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — |