Ga1As0.9P0.1
semiconductor· Ga1As0.9P0.1
Ga₁As₀.₉P₀.₁ is a quaternary III-V semiconductor alloy combining gallium arsenide (GaAs) with a small phosphorus substitution, forming a direct-bandgap compound semiconductor with a bandgap between GaAs and GaP. This material is primarily used in optoelectronic and photonic devices where the precise bandgap tuning enables efficient light emission and detection in the near-infrared to visible spectrum. Engineers select GaAsP alloys over pure GaAs or GaP when requiring optimized wavelength performance—particularly for red and amber light-emitting diodes (LEDs), laser diodes, and photodetectors operating in telecommunications and display applications.
light-emitting diodes (LEDs)laser diodesinfrared photodetectorsoptoelectronic integrated circuitsdisplay backlightingtelecommunications wavelength tuning
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.