Ga1As0.8P0.2

semiconductor

· Ga1As0.8P0.2

Ga₁As₀.₈P₀.₂ is a III-V semiconductor alloy in the gallium arsenide phosphide family, formed by substituting 20% of arsenic with phosphorus in the GaAs lattice. This quaternary compound is primarily used in optoelectronic devices where the bandgap tuning between GaAs and GaP is needed to control emission wavelength and electrical performance; it is notably employed in red and orange light-emitting diodes (LEDs) and specialized photodetectors that require specific spectral response windows. The material offers a practical middle ground between pure GaAs (infrared-focused) and GaP (visible green/yellow) compositions, making it valuable for applications where wavelength precision and lattice compatibility matter.

red/orange LEDsoptoelectronic devicesphotodetectorsvisible light emissionbandgap engineeringspecialty semiconductor optics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.620	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1As0.8P0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control