Ga1As0.6P0.4

semiconductor

· Ga1As0.6P0.4

Ga₁As₀.₆P₀.₄ is a III-V semiconductor alloy combining gallium arsenide and gallium phosphide in a 60:40 ratio, engineered to achieve a bandgap intermediate between its parent compounds. This material is used primarily in optoelectronic devices where the bandgap energy determines the wavelength of emitted or detected light, making it suitable for amber/red LED and laser applications in the visible to near-infrared spectrum. Compared to pure GaAs or GaP, this quaternary composition offers designers a tunable balance between emission wavelength and electrical performance, enabling optimization for specific signal wavelengths in automotive, industrial signaling, and telecommunications applications.

visible LEDs (amber/red)semiconductor laser diodesoptoelectronic detectorsautomotive indicator lightsindustrial warning/status indicatorsfiber-optic communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.910	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1As0.6P0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control