Ga1As0.3P0.7

semiconductor

· Ga1As0.3P0.7

Ga₁As₀.₃P₀.₇ is a III-V direct bandgap semiconductor alloy combining gallium arsenide and gallium phosphide in a 70:30 phosphorus-to-arsenic ratio. This material is primarily used in optoelectronic and photonic devices where its tunable bandgap energy—intermediate between GaAs and GaP—enables efficient light emission and detection in the visible to near-infrared spectrum. Engineers select this alloy when designing light-emitting diodes (LEDs), laser diodes, and photodetectors requiring specific wavelength output; it offers better lattice matching than some alternatives while maintaining the high electron mobility characteristic of III-V compounds.

visible-spectrum LEDsoptoelectronic devicesphotodetectorslaser diodesintegrated photonicstelecommunications wavelength engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.160	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1As0.3P0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control