Ga1As0.2P0.8

semiconductor

· Ga1As0.2P0.8

Ga₁As₀.₂P₀.₈ is a III-V semiconductor alloy combining gallium arsenide (GaAs) and gallium phosphide (GaP) in a 20:80 molar ratio, representing a tunable bandgap material within the GaAs-GaP solid-solution family. This composition is engineered to shift the bandgap between the indirect character of GaP and the direct character of GaAs, making it relevant for optoelectronic devices requiring specific wavelength responses or efficiency characteristics. The phosphorus-rich composition positions it as a research and development material for LEDs, photodetectors, and integrated photonic applications where bandgap engineering enables wavelength control and performance optimization.

light-emitting diodes (LEDs)photodetectors and photovoltaic cellsintegrated photonicsbandgap engineering for optoelectronicsvisible-spectrum emittersresearch and development (III-V semiconductors)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1As0.2P0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control