Ga1As0.1P0.9

semiconductor
· Ga1As0.1P0.9

Ga₁As₀.₁P₀.₉ is a III-V semiconductor alloy composed of gallium, arsenic, and phosphorus, where phosphorus dominates the anion sublattice. This material belongs to the GaAsₓP₁₋ₓ family and represents a phosphorus-rich composition tuned for specific bandgap and lattice properties intermediate between GaP and GaAs. The alloy is primarily used in optoelectronic devices requiring controlled bandgap engineering, particularly in light-emitting applications and photodetectors operating in the visible to near-infrared spectrum. Engineers select this composition when lattice matching to GaP substrates or when the specific bandgap energy of the phosphorus-rich region is needed to optimize wavelength output or detection sensitivity relative to pure GaAs or GaP alternatives.

LED emitters (visible light)Optoelectronic integrated circuitsPhotodetectorsSemiconductor heterostructuresBandgap engineering applicationsIII-V compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.