Ga1 is a gallium-based semiconductor material, likely a gallium arsenide (GaAs) or gallium nitride (GaN) compound or derivative, used in optoelectronic and high-frequency applications. It is employed in integrated circuits, photodetectors, light-emitting devices, and RF/microwave components where direct bandgap properties and high electron mobility offer advantages over silicon. The material is valued in aerospace, telecommunications, and photovoltaic industries for its superior performance at high frequencies and in high-temperature environments compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,554.1 | ksi | — | ||
Shear Modulus(G) | 935.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.04300 | eV/atom | — |