Ga12Os4 is an intermetallic semiconductor compound combining gallium and osmium, representing an exotic material from the transition metal-semiconductor family. This compound is primarily of research and development interest rather than established industrial production, with potential applications in high-temperature electronics and specialized optoelectronic devices where conventional semiconductors reach performance limits. Its intermetallic nature and osmium content suggest exploration for extreme-environment applications where thermal stability and electrical properties outweigh cost considerations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,628.5 | ksi | — | ||
Shear Modulus(G) | 10,156.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7649 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2440 | eV/atom | — |