Ga12 N4 O12

semiconductor

· Ga12 N4 O12

Ga₁₂N₄O₁₂ is a gallium oxynitride compound belonging to the family of mixed-anion semiconductors that combine gallium nitride (GaN) characteristics with oxide phases. This material is primarily of research and emerging technology interest rather than established high-volume production, where it is being investigated for optoelectronic and power electronic applications that exploit the bandgap tunability and thermal stability advantages of oxynitride systems compared to conventional GaN or gallium oxide (Ga₂O₃) alone.

wide-bandgap semiconductorspower device substratesoptoelectronic researchhigh-temperature electronicsemerging photovoltaicsadvanced semiconductor materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.132	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.512	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga12 N4 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control