Ga11 N1 O15

semiconductor

· Ga11 N1 O15

Ga₁₁N₁O₁₅ is an experimental gallium nitride-based oxide compound that belongs to the family of wide-bandgap semiconductors. This material is primarily of research interest for advanced optoelectronic and high-temperature semiconductor applications, as gallium nitride systems are known for high breakdown fields and thermal stability. The oxide phase composition suggests potential use in developing transparent conductive oxides, high-k dielectrics, or novel heterostructure interfaces, though this specific stoichiometry remains in early-stage investigation rather than established industrial production.

wide-bandgap semiconductor researchhigh-temperature electronicstransparent conductive oxidesoptoelectronic device prototypingadvanced dielectric filmssemiconductor heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.856	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga11 N1 O15

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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