Ga1 Si3

semiconductor

· Ga1 Si3

Ga₁Si₃ is a gallium silicide intermetallic compound combining gallium metal with silicon in a 1:3 stoichiometric ratio. This material belongs to the III-V semiconductor family and represents a research-phase compound of interest for high-temperature and wide-bandgap semiconductor applications where traditional silicon or GaAs may reach performance limits. Gallium silicides are explored primarily in advanced optoelectronics, power electronics, and high-temperature device research due to their potential for improved thermal stability and bandgap engineering compared to conventional binary semiconductors, though commercial adoption remains limited and the material is primarily found in academic and specialized industrial development contexts.

High-temperature semiconductorsWide-bandgap device researchAdvanced optoelectronic componentsPower electronics developmentThermal management applicationsNext-generation semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00540	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5900	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 Si3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control