Ga1 Se8 Ta4
semiconductorGa₁Se₈Ta₄ is a mixed-metal selenide compound combining gallium, selenium, and tantalum in a layered or framework structure. This is an experimental semiconductor material primarily of research interest rather than an established commercial compound; it belongs to the broader family of multinary metal chalcogenides being investigated for novel electronic and photonic properties. The tantalum-germanium-selenium family has shown promise in photovoltaic and nonlinear optical applications, though Ga₁Se₈Ta₄ specifically remains in early-stage exploration for potential optoelectronic device platforms where the combination of heavy metal centers and layered selenium coordination may enable tunable bandgaps or enhanced light-matter interactions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |