Ga₁Se₈Mo₄ is a mixed-metal chalcogenide semiconductor compound combining gallium, selenium, and molybdenum. This is a research-phase material within the broader family of layered metal chalcogenides, which are being investigated for optoelectronic and energy applications due to their tunable bandgap and potential for van der Waals heterostructure integration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9684 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6010 | eV/atom | — |