Ga1 Sb1
semiconductor· Ga1 Sb1
Gallium antimonide (GaSb) is a III-V compound semiconductor formed from gallium and antimony elements, belonging to the same semiconductor family as GaAs and InSb. It is primarily used in infrared optoelectronic devices, thermal imaging systems, and high-frequency applications where its direct bandgap and favorable electron mobility make it advantageous over silicon-based alternatives. GaSb is notable for its performance in mid-infrared detection and as a substrate material for lattice-matched heterostructures, though it remains less common than GaAs due to higher cost and more specialized application requirements.
infrared photodetectorsthermal imaging sensorshigh-frequency electronicsoptoelectronic devicesmid-infrared emittersheterojunction substrates
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.