Ga1 Sb1

semiconductor

· Ga1 Sb1

Gallium antimonide (GaSb) is a III-V compound semiconductor formed from gallium and antimony elements, belonging to the same semiconductor family as GaAs and InSb. It is primarily used in infrared optoelectronic devices, thermal imaging systems, and high-frequency applications where its direct bandgap and favorable electron mobility make it advantageous over silicon-based alternatives. GaSb is notable for its performance in mid-infrared detection and as a substrate material for lattice-matched heterostructures, though it remains less common than GaAs due to higher cost and more specialized application requirements.

infrared photodetectorsthermal imaging sensorshigh-frequency electronicsoptoelectronic devicesmid-infrared emittersheterojunction substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	45.90	GPa	—
Shear Modulus(G)	29.88	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1079	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1490	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 Sb1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control